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Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity

Overview of attention for article published in this source, December 2009
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14 patents
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2 Wikipedia pages

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171 Mendeley
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Article details
Title
Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity
Published by
Institute of Electrical and Electronics Engineers (IEEE), December 2009
DOI 10.1109/iedm.2009.5424411
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Timeline Attention over time Attention Score history
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Mendeley demographics

Mendeley demographics

The data shown below were compiled from readership statistics for 171 Mendeley readers of this research output. Click here to see the associated Mendeley record.
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Geographical breakdown

Geographical breakdown
Country Count As %
United States 5 3%
India 1 <1%
United Kingdom 1 <1%
France 1 <1%
Spain 1 <1%
China 1 <1%
Switzerland 1 <1%
Unknown 160 94%

Demographic breakdown

Readers by professional status
Readers by professional status Count As %
Student > Ph. D. Student 62 36%
Researcher 30 18%
Student > Master 15 9%
Student > Bachelor 8 5%
Other 5 3%
Other 20 12%
Unknown 31 18%
Readers by discipline
Readers by discipline Count As %
Engineering 94 55%
Materials Science 20 12%
Physics and Astronomy 17 10%
Computer Science 2 1%
Chemical Engineering 1 <1%
Other 5 3%
Unknown 32 19%