Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity

Overview of attention for article published in this source, December 2009

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Resistive switching layers including Hf-Al-O

Grant US-9276203-B2

United States of America

Stabilization of resistive memory

Grant US-9224471-B2

United States of America

Embedded nonvolatile memory elements having resistive switching characteristics

Grant US-9129894-B2

United States of America

Performing forming processes on resistive memory

Grant US-9001561-B2

United States of America

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