Nitrided Tetragonal $\hbox{ZrO}_{2}$ as the Charge-Trapping Layer for Nonvolatile Memory Application

Overview of attention for article published in IEEE Electron Device Letters, November 2009

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METHOD OF FORMING MEMORY CELL WITH HIGH-K CHARGE TRAPPING LAYER

Application WO-2016191155-A1

World Intellectual Property Organisation (WIPO)

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