Post-annealing sequence effects on the characteristics of 20keV BF2 ion implantation at various ion fluences

Overview of attention for article published in Nuclear Instruments & Methods in Physics Research Section B, January 2006

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patent: 2 patents

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Method for minimizing defects in a semiconductor substrate due to ion implantation

Grant US-8377807-B2

United States of America

METHOD FOR MINIMIZING DEFECTS IN A SEMICONDUCTOR SUBSTRATE DUE TO ION IMPLANTATION

Application WO-2012044359-A1

World Intellectual Property Organisation (WIPO)

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