| Title |
Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties
|
|---|---|
| Published in |
Scientific Reports, June 2015
|
| DOI | 10.1038/srep10505 |
| Pubmed ID | |
| Authors | |
| Abstract |
We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accompanied by a more than three-fold increase in carrier mobility, up to μh ≈ 4540 cm(2) V(-1) s(-1). On a local scale, Kelvin probe force microscopy provides a complete and detailed map of the surface potential distribution of graphene domains of different thicknesses. Rearrangement of graphene layers upon intercalation to (n + 1)LG, where n is the number of graphene layers (LG) before intercalation, is demonstrated. This is accompanied by a significant increase in the work function of the graphene after the H2-intercalation, which confirms the change of majority carriers from electrons to holes. Raman spectroscopy and mapping corroborate surface potential studies. |
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Mendeley demographics
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| Student > Bachelor | 3 | 3% |
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