Growth and properties of TiN and TiOxNy diffusion barriers in silicon on sapphire integrated circuits

Overview of attention for article published in Thin Solid Films, October 1987

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Method for the formation of thin films for use as a semiconductor device

Grant US-6306765-B1

United States of America

Method of producing high surface area metal oxynitrides as substrates in electrical…

Grant US-5980977-A

United States of America

Process for forming a semiconductor device with an antireflective layer

Grant US-5918147-A

United States of America

Method for forming a titanium nitride barrier layer

Grant US-5232871-A

United States of America

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