Optically achieved p-i-n diode switch utilizing a two-dimensional laser array at 808 nm as an optical source

Overview of attention for article published in IEEE Transactions on Electron Devices, January 1989

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patent: 3 patents

So far, Altmetric has seen 3 patents that reference this research output.

Method of producing semiconductor device having light receiving element with capacitance

Grant US-5185272-A

United States of America

Semiconductor device having light receiving element and method of producing the same

Application EP-0452801-A2

European Patent Office

Device having two optical ports for switching applications

Grant US-5051789-A

United States of America

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