Nitride light-emitting diodes grown on Si (111) using a TiN template

Overview of attention for article published in Applied Physics Letters, May 2006

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So far, Altmetric has seen 20 patents that reference this research output.

Materials, structures, and methods for optical and electrical III-nitride semiconductor…

Grant US-12464847-B1

United States of America

04 Nov 2025

BASE STRUCTURE FOR VERTICAL SEMICONDUCTOR DEVICES, USE OF SAME, AND METHOD FOR…

Application WO-2025089116-A1

World Intellectual Property Organisation (WIPO)

01 May 2025

SEMICONDUCTOR OPTICAL AMPLIFIER FOR LASER DEVICES, PARTICULARLY OF THE QUANTUM CASCADE…

Application WO-2024028745-A1

World Intellectual Property Organisation (WIPO)

08 Feb 2024

Method and system for group IIIA nitride growth

Grant US-11651959-B2

United States of America

16 May 2023

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