Microstructure and properties of multilayer-derived tungsten silicide

Overview of attention for article published in Journal of Electronic Materials, July 1987

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Method of forming a semiconductor device

Grant US-6376371-B1

United States of America

Method for forming a semiconductor device

Grant US-6255204-B1

United States of America

Method of forming a barrier layer

Grant US-6153519-A

United States of America

Semiconductor device having a metal containing layer overlying a gate dielectric

Grant US-6084279-A

United States of America

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