Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs

Overview of attention for article published in Journal of Applied Physics, December 1983

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Surface-emission semiconductor laser device

Grant US-7881359-B2

United States of America

Surface-emission semiconductor laser device

Grant US-7368316-B2

United States of America

ELECTRODE STRUCTURE FOR III-V COMPOUND SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING…

Grant US-5077599-A

United States of America

Polycrystalline silicon ohmic contacts to group III-arsenide compound semiconductors

Grant US-5027187-A

United States of America

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