Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy

Overview of attention for article published in Applied Physics Letters, June 1996

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Integrated transistor devices

Grant US-7190037-B2

United States of America

Junction field effect metal oxide compound semiconductor integrated transistor devices

Grant US-7187045-B2

United States of America

Metal oxide compound semiconductor integrated transistor devices with a gate insulator…

Grant US-6989556-B2

United States of America

Integrated transistor devices

Grant US-6936900-B1

United States of America

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