Growth and properties of radio frequency reactively sputtered titanium nitride thin films

Overview of attention for article published in Journal of Vacuum Science & Technology: Part B, July 1987

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Good Attention Score compared to outputs of the same age (67th percentile)
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patent: 6 patents

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So far, Altmetric has seen 6 patents that reference this research output.

Metal / metal nitride barrier layer for semiconductor device applications

Grant US-7687909-B2

United States of America

30 Mar 2010

Method of depositing a tantalum nitride/tantalum diffusion barrier layer system

Grant US-7253109-B2

United States of America

07 Aug 2007

Method of depositing a TaN seed layer

Grant US-6911124-B2

United States of America

28 Jun 2005

Thin film resistor and method for forming the same

Grant US-6466124-B1

United States of America

15 Oct 2002

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