In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity

Overview of attention for article published in Applied Physics Letters, January 1995

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Method for oxidizing a substrate surface using oxygen

Grant US-10256290-B2

United States of America

Method for oxidizing a substrate surface using oxygen

Grant US-9837486-B2

United States of America

Article comprising a gallium layer on a GaAs-based semiconductor, and method of making…

Grant US-5821171-A

United States of America

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