Novel source-controlled self-verified programming for multilevel EEPROMs

Overview of attention for article published in IEEE Transactions on Electron Devices, June 2000

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High voltage generation and control in source-side injection programming of non-volatile…

Grant US-8406052-B2

United States of America

Circuit and method for powering up an integrated circuit and an integrated circuit…

Grant US-8253452-B2

United States of America

Contact in planar NROM technology

Grant US-8053812-B2

United States of America

Non-volatile memory structure and method of fabrication

Grant US-7964459-B2

United States of America

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