A comparative study of wet and dry selective etching processes for GaAs/AIGaAs/lnGaAs pseudomorphic MODFETs

Overview of attention for article published in Journal of Electronic Materials, January 1992

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Semiconductor device including dual damascene structure and method for fabricating the…

Grant US-12588441-B2

United States of America

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Application US-20230411144-A1

United States of America

Fabrication process of semiconductor device

Grant US-6093657-A

United States of America

Method of fabricating Group III-V compound semiconductor devices using selective etching

Grant US-RE36185-E

United States of America

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