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Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II. Epitaxial quality

Overview of attention for article published in Journal of Applied Physics, October 1987
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About this Attention Score

  • In the top 25% of all research outputs scored by Altmetric
  • High Attention Score compared to outputs of the same age (87th percentile)
  • High Attention Score compared to outputs of the same age and source (91st percentile)

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