Observation of Reduced Poly‐Gate Depletion Effect for Poly ‐ Si0.8Ge0.2 ‐ Gated NMOS Devices

Overview of attention for article published in Electrochemical and Solid State Letters, January 1999

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Flash memory embedded with HKMG technology

Grant US-9184252-B2

United States of America

Evaluation method of semiconductor device, manufacturing method of the semiconductor…

Grant US-7615422-B2

United States of America

Evaluation method of semiconductor device, manufacturing method of the semiconductor…

Grant US-7100131-B2

United States of America

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