A 6-F2 Bit Cell Design Based on One Transistor and Two Uneven Magnetic Tunnel Junctions Structure and Low Power Design for MRAM

Overview of attention for article published in IEEE Transactions on Electron Devices, July 2006

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High-bandwidth magnetoresistive random access memory devices and methods of operation…

Grant US-7577017-B2

United States of America

High-bandwidth magnetoresistive random access memory devices

Grant US-7463510-B2

United States of America

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