A 0.26-$\mu\hbox{m}^{2}$ U-Shaped Nitride-Based Programming Cell on Pure 90-nm CMOS Technology

Overview of attention for article published in IEEE Electron Device Letters, September 2007

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Physically unclonable function produced using OTP memory

Grant US-12483429-B2

United States of America

One-time programmable memories with ultra-low power read operation and novel sensing…

Grant US-11615859-B2

United States of America

One-time programmable memories with low power read operation and novel sensing scheme

Grant US-11062786-B2

United States of America

One-time programmable memory using gate-all-around structures

Grant US-11011577-B2

United States of America

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