Embedded non-volatile memory with single polysilicon layer memory cells erasable through… Grant US-10468425-B2 United States of America 05 Nov 2019
Semiconductor device with one-time programmable memory cell including anti-fuse with metal… Grant US-9136271-B2 United States of America 15 Sep 2015
MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse element Grant US-9076791-B1 United States of America 07 Jul 2015
Semiconductor device with one-time programmable memory cell including anti-fuse with metal… Grant US-8743585-B2 United States of America 03 Jun 2014