$\hbox{HfO}_{x}$ Bipolar Resistive Memory with Robust Endurance Using AlCu as Buffer Electrode

Overview of attention for article published in IEEE Electron Device Letters, May 2009

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Resistive switching layers including Hf-Al-O

Grant US-9276203-B2

United States of America

Resistive-switching memory elements having improved switching characteristics

Grant US-8975613-B1

United States of America

Floating gate device with oxygen scavenging element

Grant US-8941169-B2

United States of America

Floating gate device with oxygen scavenging element

Grant US-8912061-B2

United States of America

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