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Poly-Si Nanowire Nonvolatile Memory with Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

Overview of attention for article published in IEEE Electron Device Letters, October 2010
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  • Good Attention Score compared to outputs of the same age (70th percentile)
  • High Attention Score compared to outputs of the same age and source (80th percentile)

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