Characterization of titanium nitride etch rate and selectivity to silicon dioxide in a Cl2 helicon-wave plasma

Overview of attention for article published in Journal of Vacuum Science & Technology: Part B, March 2001

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Three-dimensional memory device including composite backside metal fill structures and…

Grant US-12482751-B2

United States of America

25 Nov 2025

Three-dimensional memory device including composite backside metal fill structures

Grant US-12484224-B2

United States of America

25 Nov 2025

Three-dimensional memory device including composite backside metal fill structures and…

Grant US-12408337-B2

United States of America

02 Sep 2025

Three-dimensional memory device containing variable thickness word lines with reduced…

Grant US-12347773-B2

United States of America

01 Jul 2025

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