A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire
Overview of attention for article published in IEEE Transactions on Nanotechnology, March 2004
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Good Attention Score compared to outputs of the same age (67th percentile)
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Good Attention Score compared to outputs of the same age and source (66th percentile)
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