A study of surface and interlayer structures of epitaxially grown group-III nitride compound films on Si(111) substrates by second-harmonic generation

Overview of attention for article published in Journal of Physics: Condensed Matter, September 2003

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Group III-nitrides on Si substrates using a nanostructured interlayer

Grant US-8946674-B2

United States of America

Group III-nitrides on SI substrates using a nanostructured interlayer

Grant US-8268646-B2

United States of America

Crack free multilayered devices, methods of manufacture thereof and articles comprising…

Grant US-8222057-B2

United States of America

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