Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

Overview of attention for article published in Nano Letters, March 2012

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So far, Altmetric has seen 8 patents that reference this research output.

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a…

Grant US-11456370-B2

United States of America

27 Sep 2022

Method of making heteroepitaxial structures and device formed by the method

Grant US-11374106-B2

United States of America

28 Jun 2022

Method of making heteroepitaxial structures and device formed by the method

Grant US-11349011-B2

United States of America

31 May 2022

Semiconductor product comprising a heteroepitaxial layer grown on a seed area of a…

Grant US-11342442-B2

United States of America

24 May 2022

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