Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme

Overview of attention for article published in IEEE Journal of Solid-State Circuits, January 2014

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Resistive memory system, driver circuit thereof and method for setting resistance thereof

Grant US-9443588-B2

United States of America

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