TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs

Overview of attention for article published in IEEE Transactions on Electron Devices, September 2011

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So far, Altmetric has seen 4 patents that reference this research output.

Integrated assemblies and methods of forming integrated assemblies

Grant US-11728395-B2

United States of America

Integrated assemblies and methods of forming integrated assemblies

Grant US-11527623-B2

United States of America

Integrated Assemblies and Methods of Forming Integrated Assemblies

Application US-20220037483-A1

United States of America

Method to form dual tin layers as pFET work metal stack

Grant US-9768171-B2

United States of America

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