Impact of synthesis conditions on surface chemistry and structure of carbide-derived carbons

Overview of attention for article published in Thermochimica Acta, January 2010

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Substrate processing method and apparatus

Grant US-12745611-B2

United States of America

Apparatus and method for removal of oxide and carbon from semiconductor films in a single…

Grant US-12685061-B2

United States of America

Method of forming structures for threshold voltage control

Grant US-12672357-B2

United States of America

Compositions for depositing material, synthesis methods and uses

Grant US-12630919-B2

United States of America

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