A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes

Overview of attention for article published in IEEE Journal of Solid-State Circuits, December 2012

Altmetric Badge

About this Attention Score

Good Attention Score compared to outputs of the same age (76th percentile)
Average Attention Score compared to outputs of the same age and source

Mentioned by

patent: 5 patents

Readers on

mendeley: 54 Mendeley

So far, Altmetric has seen 5 patents that reference this research output.

Memory control circuit capable of generating an updated reference current

Grant US-12417805-B2

United States of America

16 Sep 2025

Memory devices and methods of forming the same

Grant US-11978510-B2

United States of America

07 May 2024

Memory devices and methods of forming the same

Grant US-11127459-B1

United States of America

21 Sep 2021

MEMORY DEVICE

Grant KR-101804631-B1

Republic of Korea

04 Dec 2017

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity, including 1 additional patents.