A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

Overview of attention for article published in Sensors, October 2009

Altmetric Badge

Mentioned by

patent: 1 patent

Readers on

mendeley: 36 Mendeley

So far, Altmetric has seen 1 patent that references this research output.

Ion sensitive device and method of fabrication

Grant US-9869657-B2

United States of America

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity.