| Title |
Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors
|
|---|---|
| Published in |
ACS Applied Materials & Interfaces, September 2015
|
| DOI | 10.1021/acsami.5b07140 |
| Pubmed ID | |
| Authors | |
| Abstract |
In this letter we demonstrate a solution-based method for a one-step deposition and surface passivation of the as-grown silicon nanowires. Using N, N-dimethylformamide (DMF) as a mild oxidizing agent, nanowires' surface traps density was reduced by over two orders of magnitude from 1x1013 cm-2 in pristine NWs to 3.7x1010 cm-2 in DMF treated NWs, leading to a dramatic hysteresis reduction in nanowire FETs from up to 32V to a near-zero hysteresis. The change of polyphenylsilane nanowire shell stoichiometric composition was confirmed by XPS analysis showing 35% increase in fully oxidized Si4+ species for DMF-treated nanowires compared to dry NW powder. Additionally, shell oxidation effect induced by DMF resulted is more stable NW FET performance with steady transistor currents and only 1.5V hysteresis after 1000 hours air exposure. |
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X Demographics
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| United States | 1 | 50% |
| Unknown | 1 | 50% |
Demographic breakdown
| Type | Count | As % |
|---|---|---|
| Scientists | 2 | 100% |
Mendeley demographics
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| Unknown | 17 | 100% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Student > Ph. D. Student | 7 | 41% |
| Student > Doctoral Student | 2 | 12% |
| Professor | 2 | 12% |
| Student > Master | 2 | 12% |
| Other | 1 | 6% |
| Other | 2 | 12% |
| Unknown | 1 | 6% |
| Readers by discipline | Count | As % |
|---|---|---|
| Engineering | 6 | 35% |
| Physics and Astronomy | 3 | 18% |
| Materials Science | 3 | 18% |
| Chemical Engineering | 2 | 12% |
| Chemistry | 2 | 12% |
| Other | 1 | 6% |