Interface Passivation and Trap Reduction via a Solution-Based Method for Near-Zero Hysteresis Nanowire Field-Effect Transistors

Overview of attention for article published in ACS Applied Materials & Interfaces, September 2015

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RT @KorgelTweets: New paper in collab. with @UniOfSurrey in @ACS_AMI on passivation of Si nanowires with DMF for low-hysteresis FETs: http:…

New paper in collab. with @UniOfSurrey in @ACS_AMI on passivation of Si nanowires with DMF for low-hysteresis FETs: http://t.co/M6x0hXmSFr

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