A 7NM CMOS Platform Technology Featuring 4th Generation FinFET Transistors with a 0.027um2 High Density 6-T SRAM Cell for Mobile SoC Applications

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Title	A 7NM CMOS Platform Technology Featuring 4th Generation FinFET Transistors with a 0.027um2 High Density 6-T SRAM Cell for Mobile SoC Applications
Published by	Institute of Electrical and Electronics Engineers (IEEE), December 2016
DOI	10.1109/iedm.2016.7838333
Authors	Shien-Yang Wu, C. Y. Lin, M. C. Chiang, J. J. Liaw, J. Y. Cheng, S. H. Yang, C. H. Tsai, P. N. Chen, T. Miyashita, C. H. Chang, V. S. Chang, K. H. Pan, J. H. Chen, Y. S. Mor, K. T. Lai, C. S. Liang, H. F. Chen, S. Y. Chang, C. J. Lin, C. H. Hsieh, R. F. Tsui, C. H. Yao, C. C. Chen, R. Chen, C. H. Lee, H. J. Lin, C. W. Chang, K. W. Chen, M. H. Tsai, K. S. Chen, Y. Ku, S. M. Jang

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Unknown	1	100%

Type
Type	Count	As %
Members of the public	1	100%

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Readers by professional status	Count	As %
Student > Ph. D. Student	38	28%
Researcher	27	20%
Student > Master	17	13%
Student > Bachelor	8	6%
Student > Doctoral Student	5	4%
Other	14	10%
Unknown	26	19%