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TMD FinFET with 4nm Thin Body and Back Gate Control for Future Low Power Technology

Overview of attention for article published in this source, December 2015
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87 Mendeley
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Article details
Title
TMD FinFET with 4nm Thin Body and Back Gate Control for Future Low Power Technology
Published by
Institute of Electrical and Electronics Engineers (IEEE), December 2015
DOI 10.1109/iedm.2015.7409813
Authors

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Timeline Attention over time Attention Score history
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Mendeley demographics

Mendeley demographics

The data shown below were compiled from readership statistics for 87 Mendeley readers of this research output. Click here to see the associated Mendeley record.
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Geographical breakdown

Geographical breakdown
Country Count As %
Unknown 87 100%

Demographic breakdown

Readers by professional status
Readers by professional status Count As %
Student > Ph. D. Student 26 30%
Researcher 17 20%
Student > Master 10 11%
Student > Bachelor 5 6%
Student > Doctoral Student 4 5%
Other 7 8%
Unknown 18 21%
Readers by discipline
Readers by discipline Count As %
Engineering 42 48%
Materials Science 16 18%
Physics and Astronomy 5 6%
Computer Science 2 2%
Chemical Engineering 1 1%
Other 1 1%
Unknown 20 23%