Multilevel Anti-Fuse Cells by Progressive Rupturing of the High- $\kappa $ Gate Dielectric in FinFET Technologies

Overview of attention for article published in IEEE Electron Device Letters, July 2016

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MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

Application US-20250131967-A1

United States of America

Multi-level ultra-low power inference engine accelerator

Grant US-11289171-B1

United States of America

One-time programmable memory using rupturing of gate insulation

Grant US-9953990-B1

United States of America

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