The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation

Overview of attention for article published in Journal of Applied Physics, July 2005

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In the top 25% of all research outputs scored by Altmetric
High Attention Score compared to outputs of the same age (82nd percentile)
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patent: 6 patents

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mendeley: 12 Mendeley

So far, Altmetric has seen 6 patents that reference this research output.

Method for performing activation of dopants in a GaN-base semiconductor layer by…

Grant US-9536741-B2

United States of America

03 Jan 2017

Method for performing activation of dopants in a GaN-base semiconductor layer

Grant US-9514962-B2

United States of America

06 Dec 2016

Method for doping a GaN-base semiconductor

Grant US-9496348-B2

United States of America

15 Nov 2016

Method for fabricating an improved GAN-based semiconductor layer

Grant US-9478424-B2

United States of America

25 Oct 2016

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