Fabrication and Transfer of Flexible Few-Layers MoS2 Thin Film Transistors to Any Arbitrary Substrate

Overview of attention for article published in ACS Nano, September 2013

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In the top 25% of all research outputs scored by Altmetric
High Attention Score compared to outputs of the same age (89th percentile)
Good Attention Score compared to outputs of the same age and source (79th percentile)

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patent: 6 patents

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So far, Altmetric has seen 6 patents that reference this research output.

Multi-layered semiconductive device and methodology with polymer and transition metal…

Grant US-11908690-B2

United States of America

20 Feb 2024

Method for transferring thin layers

Grant US-11562899-B2

United States of America

24 Jan 2023

MULTI-LAYERED SEMICONDUCTIVE DEVICE AND METHODOLOGY WITH POLYMER AND TRANSITION METAL…

Application WO-2020257703-A1

World Intellectual Property Organisation (WIPO)

24 Dec 2020

Systems and methods for optical physical unclonable parameters

Grant US-10862692-B2

United States of America

08 Dec 2020

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