Sige HBTs on Bonded SOI Incorporating Buried Silicide Layers

Overview of attention for article published in IEEE Transactions on Electron Devices, March 2005

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Silicided collector structure

Grant US-11640975-B2

United States of America

Monolithic output stage with vertical high-side PMOS and vertical low-side NMOS…

Grant US-8193583-B2

United States of America

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