Black GaAs by Metal-Assisted Chemical Etching

Overview of attention for article published in ACS Applied Materials & Interfaces, September 2018

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twitter: 1 X user

wikipedia: 4 Wikipedia pages

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So far, Altmetric has seen 4 citations on 4 Wikipedia pages.

Persian

اچینگ شیمیایی به کمک فلز

Cited by user Smamaddah on 04 Jul 2025

اچینگ شیمیایی به کمک فلز (همچنین با نام MACE شناخته می‌شود) فرآیند اچینگ شیمیایی مرطوب نیمه‌رساناها با استفاده از یک کاتالیزور فلزی است؛ که معمولاً به شکل یک فیلم نازک یا…

Chinese

金属辅助化学蚀刻

Cited by user 思考的苇丛 on 05 Apr 2025

金属辅助化学刻蚀（Metal Assisted Chemical Etching，简称MACE）是一种利用金属催化剂对半导体（主要为硅）进行湿法化学蚀刻的工艺. 通常，将金属以薄膜或纳米粒子的形式沉积在半导体表面，随后将该金属覆盖的半导体浸入含有氧化剂和氢氟酸的刻蚀溶液中.

English

Metal assisted chemical etching

Cited by user 2001:B07:A3D:DD51:AD32:5007:3E3C:AA27 on 07 Apr 2023

Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually…

English

Gallium arsenide

Cited by user 93.34.87.189 on 11 May 2020

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.

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