A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques

Overview of attention for article published in Journal of Applied Physics, September 2019

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RT @sweeney_lab: Latest paper from the group: A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spec…

Latest paper from the group: A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques: https://t.co/xEJLMNH6aS

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