Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration

Overview of attention for article published in Scientific Reports, October 2019

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Published today: Collaborative work between @sweeney_lab @PhysicsatSurrey @TyndallPTG @ElegUark @ASMLcompany on the unusual electronic properties of GeSn - an important new semiconductor for silicon photonics and sensing https://t.co/X30X4B1IIM

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