| Title |
High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics
|
|---|---|
| Published in |
ACS Nano, April 2012
|
| DOI | 10.1021/nn301199j |
| Pubmed ID | |
| Authors |
Chun-Chieh Lu, Yung-Chang Lin, Chao-Hui Yeh, Ju-Chun Huang, Po-Wen Chiu |
| Abstract |
A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm(2)/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics. |
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Mendeley demographics
Geographical breakdown
| Country | Count | As % |
|---|---|---|
| United Kingdom | 4 | 2% |
| United States | 3 | 1% |
| Poland | 1 | <1% |
| Latvia | 1 | <1% |
| Japan | 1 | <1% |
| Spain | 1 | <1% |
| Germany | 1 | <1% |
| Brazil | 1 | <1% |
| Unknown | 188 | 94% |
Demographic breakdown
| Readers by professional status | Count | As % |
|---|---|---|
| Student > Ph. D. Student | 58 | 29% |
| Researcher | 40 | 20% |
| Student > Master | 24 | 12% |
| Professor > Associate Professor | 12 | 6% |
| Student > Doctoral Student | 11 | 5% |
| Other | 31 | 15% |
| Unknown | 25 | 12% |
| Readers by discipline | Count | As % |
|---|---|---|
| Engineering | 62 | 31% |
| Materials Science | 34 | 17% |
| Physics and Astronomy | 33 | 16% |
| Chemistry | 22 | 11% |
| Agricultural and Biological Sciences | 3 | 1% |
| Other | 10 | 5% |
| Unknown | 37 | 18% |