CMOS-Compatible GaN-on-Si Field-Effect Transistors for High Voltage Power Applications

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Power semiconductor device with an auxiliary gate structure

Grant US-11955478-B2

United States of America

III-V semiconductor device with integrated power transistor and start-up circuit

Grant US-11658236-B2

United States of America

Power semiconductor device with an auxiliary gate structure

Grant US-11404565-B2

United States of America

Power semiconductor device with a series connection of two devices

Grant US-11336279-B2

United States of America

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