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3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Overview of attention for article published in this source, December 2019
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1 X user
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3 patents

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54 Mendeley
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Article details
Title
3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx
Published by
Institute of Electrical and Electronics Engineers (IEEE), December 2019
DOI 10.1109/iedm19573.2019.8993504
Authors

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Timeline Attention over time Attention Score history
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Activity
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X Demographics

X Demographics

The data shown below were collected from the profile of 1 X user who shared this research output. Click here to find out more about how the information was compiled.
Mendeley demographics

Mendeley demographics

The data shown below were compiled from readership statistics for 54 Mendeley readers of this research output. Click here to see the associated Mendeley record.
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Geographical breakdown

Geographical breakdown
Country Count As %
Unknown 54 100%

Demographic breakdown

Readers by professional status
Readers by professional status Count As %
Researcher 12 22%
Student > Master 7 13%
Student > Ph. D. Student 4 7%
Student > Doctoral Student 3 6%
Professor 3 6%
Other 5 9%
Unknown 20 37%
Readers by discipline
Readers by discipline Count As %
Engineering 18 33%
Physics and Astronomy 7 13%
Materials Science 5 9%
Biochemistry, Genetics and Molecular Biology 1 2%
Computer Science 1 2%
Other 1 2%
Unknown 21 39%