3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Overview of attention for article published in this source, December 2019

Altmetric Badge

Mentioned by

twitter: 1 X user

patent: 3 patents

Readers on

mendeley: 54 Mendeley

So far, Altmetric has seen 3 patents that reference this research output.

Ferroelectric memory device with a metal layer having a crystal orientation for improving…

Grant US-12363912-B2

United States of America

Ferroelectric memory device with a metal layer having a crystal orientation for improving…

Grant US-11903217-B2

United States of America

Ferroeolectric memories with ferroelectric composite layer

Grant US-11856789-B2

United States of America

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity.