N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy

Overview of attention for article published in Physical Review B: Condensed Matter and Materials Physics, September 2020

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RT @MarcoFelici8: Visualizing the N-H complex responsible for the passivation of nitrogen in GaAsN has always been a dream of mine... Here…

Visualizing the N-H complex responsible for the passivation of nitrogen in GaAsN has always been a dream of mine... Here we’re as close as ever https://t.co/2TIsaQpDps

[2007.11879] D. Tjeertes, T. J. F. Verstijnen, A. Gonzalo et al.: N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy https://t.co/LGMAVZXUpb https://t.co/l4CZ4YjUZg #cond_mat_mes_hall

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