We have performed Helium (He) ion implantation on InAs and performed post implant annealing to investigate the effect on the sheet resistance. Using the transmission line model (TLM) we have shown that the sheet resistance of a p⁺ InAs layer, with a nominal doping concentration of 1x10¹⁸ cm⁻³, can increase by over 5 orders of magnitude upon implantation. We achieved a sheet resistance of 1x10⁵ Ω/Square in an 'as-implanted' sample and with subsequent annealing this can be further increased to 1x10⁷ Ω/Square. By also performing implantation on p-i-n structures we have shown that it is possible to produce planar photodiodes with comparable dark currents and quantum efficiencies to chemically etched reference mesa InAs photodiodes.
This research output has an Altmetric Attention Score of 3. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 16 July 2024.
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#12,425,701
of 34,517,649 outputs
Outputs from Optics Express Online
#8,083
of 22,508 outputs
Outputs of similar age
#80,585
of 208,950 outputs
Outputs of similar age from Optics Express Online
#122
of 310 outputs
Altmetric has tracked 34,517,649 research outputs across all sources so far. This one is in the 37th percentile – i.e., 37% of other outputs scored the same or lower than it.
So far Altmetric has tracked 22,508 research outputs from this source. They typically receive a little more attention than average, with a mean Attention Score of 5.2. This one is in the 20th percentile – i.e., 20% of its peers scored the same or lower than it.
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