Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors

Overview of attention for article published in Journal of Electronic Materials, September 2012

Altmetric Badge

About this Attention Score

Average Attention Score compared to outputs of the same age

Mentioned by

patent: 6 patents

Readers on

mendeley: 19 Mendeley

So far, Altmetric has seen 6 patents that reference this research output.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Grant US-11271122-B2

United States of America

08 Mar 2022

Monolithic multijunction power converter

Grant US-11233166-B2

United States of America

25 Jan 2022

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride…

Grant US-11211514-B2

United States of America

28 Dec 2021

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar…

Grant US-10930808-B2

United States of America

23 Feb 2021

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity, including 2 additional patents.