GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Overview of attention for article published in IEEE Electron Device Letters, May 2011

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So far, Altmetric has seen 18 patents that reference this research output.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Grant US-11271122-B2

United States of America

08 Mar 2022

Monolithic multijunction power converter

Grant US-11233166-B2

United States of America

25 Jan 2022

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride…

Grant US-11211514-B2

United States of America

28 Dec 2021

Photoelectron detector with dilute nitride layer on substrate with lattice parameters…

Application JP-2021108403-A

Japan

29 Jul 2021

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